Période 1970 - 2024

Articles

251 - 

Influence of precursor on LPCVD polysilicon TFT's characteristics

Regis Rogel, G. Gautier, Nathalie . Coulon, Michel Sarret, Olivier Bonnaud

Thin Solid Films, 2003, 427, pp.108-112.

 

252 - 

Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon

Amar Saboundji, Jean-François Michaud, Tayeb Mohammed-Brahim, France Le Bihan, G. Andrä, J. R. Bergmann, F. Falk

Solid State Phenomena, 2003, 93, pp.55-60.

 

253 - 

Utilisation en enseignement d'un outil intégré pour la simulation de systèmes de télécomunications

Abdallah Soulmani, Samuel Crand, Jean-François Diouris, Abdellah Ait Ouahman

International Journal of Physical and Chemical News, 2003, pp.34-42.

 

254 - 

Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

H. Toutah, B. Tala-Ighil, Jean-François Llibre, B. Boudard, Tayeb Mohammed-Brahim, Olivier Bonnaud

Microelectronics Reliability, 2003, 43, pp.1531-1535.

 

255 - 

Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

H. Toutah, B. Tala-Ighil, Jean-François Llibre, B. Boudart, T. Mohammed-Brahim, O. Bonnaud

Microelectronics Reliability, 2003, 43 (9-11), pp.1531 - 1535.

DOI : https://doi.org/10.1016/S0026-2714(03)00271-3

 

256 - 

State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior

H. Toutah, Jean-François Llibre, B. Tala-Ighil, B. Boudart, T. Mohammed-Brahim

Thin Solid Films, 2003, 427 (1-2), pp.340 - 344.

DOI : https://doi.org/10.1016/S0040-6090(02)01209-9

 

257 - 

Reliability of TFTs

H. Toutah, Jean-François Llibre, Tayeb Mohammed-Brahim, Olivier Bonnaud

Microelectronics Reliability, 2003, 43, pp.1531-1535.

 

258 - 

Reliability improvement of high value doped polysilicon-based resistors

Erwann Carvou, France Le Bihan, Anne-Claire Salaün, Régis Rogel, Olivier Bonnaud, Y. Rey-Tauriac, X. Gagnard, L. Roland

Microelectronics Reliability, 2002, 42, pp.1369-1372.

 

259 - 

Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HMDSO)

G. Gautier, Nathalie . Coulon, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, Olivier Bonnaud

Polycristalline Semiconductors VI, 2002, 2002-23, pp.55-62.

 

260 - 

Study of the stability of polycristalline silicon by means of the behavior of thin film transistors under gate bias stress

Tayeb Mohammed-Brahim, A. Rahal, G. Gautier, F. Raoult, H. Toutah, B. Tala-Ighil, Jean-François Llibre

Journal of Non-Crystalline Solids, 2002, 299-302, pp.497-501.

 

261 - 

Polycristalline silicon deposited on glass by sub-atmospheric-pressure CVD at high rate

P. Münster, Michel Sarret, Tayeb Mohammed-Brahim, Nathalie . Coulon, J.-Y. Mevellec

Philosophical Magazine B, 2002.

 

262 - 

Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors

L. Pichon, A. Mercha, R. Carin, T. Mohammed-Brahim, O. Bonnaud, Y. Helen

Solid-State Electronics, 2002, 46 (4), pp.459-466.

DOI : https://doi.org/10.1016/S0038-1101(01)00324-0

 

263 - 

Comparison of the electrical behavior in the subthreshold region between laser and solid state phase crystallized polysilicon thin film transistors

Laurent Pichon, A. Mercha, Régis Carin, Tayeb Mohammed-Brahim, Olivier Bonnaud, Y. Helen

Solid-State Electronics, 2002, 46, pp.459-466.

 

264 - 

Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise

A. Mercha, L. Pichon, R. Carin, K. Mourgues, O. Bonnaud

Thin Solid Films, 2001, 383 (1-2), pp.303-306.

DOI : https://doi.org/10.1016/S0040-6090(00)01795-8

 

265 - 

Current crowding and 1/f noise in polycrystalline silicon thin film transistors

A. Mercha, L. Vandamme, L. Pichon, R. Carin, O. Bonnaud

Journal of Applied Physics, 2001, 90 (8), pp.4019-4026.

DOI : https://doi.org/10.1063/1.1404418

 

266 - 

Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors

A Mercha, J Rhayem, L Pichon, M Valenza, J.M Routoure, R Carin, O Bonnaud, D Rigaud

Microelectronics Reliability, 2000, 40 (11), pp.1891-1896.

DOI : https://doi.org/10.1016/S0026-2714(00)00060-3

 

267 - 

Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors

L. Pichon, A. Mercha, R. Carin, O. Bonnaud, T. Mohammed-Brahim, Y. Helen, R. Rogel

Applied Physics Letters, 2000, 77 (4), pp.576-578.

DOI : https://doi.org/10.1063/1.127049

 

268 - 

State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

B. Tala-Ighil, A. Rahal, K. Mourgues, A. Toutah, L. Pichon, T. Mohammed-Brahim, F. Raoult, O. Bonnaud

Thin Solid Films, 1999, 337 (1-2), pp.101-104.

DOI : https://doi.org/10.1016/S0040-6090(98)01192-4

 

269 - 

State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

B. Tala-Ighil, A. Rahal, K. Mourgues, A. Toutah, L. Pichon, T. Mohammed-Brahim, F. Raoult, O. Bonnaud

Thin Solid Films, 1999, 337 (1-2), pp.101-104.

DOI : https://doi.org/10.1016/S0040-6090(98)01192-4

 

270 - 

Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors

B. Tala-Ighil, H. Toutah, A. Rahal, K. Mourgues, L. Pichon, F. Raoult, O. Bonnaud, T. Mohammed-Brahim

Microelectronics Reliability, 1998, 38 (6-8), pp.1149-1153.

DOI : https://doi.org/10.1016/S0026-2714(98)00098-5

 

271 - 

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand, O. Bonnaud

MRS Proceedings, 1997, 471, pp.155.

DOI : https://doi.org/10.1557/PROC-471-155

 

272 - 

Very-Low Surface Roughness in Laser Crystallized Polycrystalline Silicon

K. Mourgues, L. Pichon, F. Raoult, T. Mohammed-Brahim, D. Briand, O. Bonnaud, D. Lemoine, P. Boher, M. Sthelé, J. Sthelé

MRS Proceedings, 1997, 471, pp.197.

DOI : https://doi.org/10.1557/PROC-471-197

 

273 - 

Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

L. Pichon, F. Raoult, K. Mourgues, K. Kis-Sion, T. Mohammed-Brahim, O. Bonnaud

Thin Solid Films, 1997, 296 (1-2), pp.133-136.

DOI : https://doi.org/10.1016/S0040-6090(96)09373-X

 

274 - 

Characterization of the polysilicon thin film transistors elaborated in high and low temperature processes. Study of the density of traps

H. Sehil, N.M. Rahmani, L. Pichon, R. Menezla, F. Raoult, Z. Benamara

Synthetic Metals, 1997, 90 (3), pp.181-185.

DOI : https://doi.org/10.1016/S0379-6779(98)80004-0

 

275 - 

Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors

L. Pichon, F. Raoult, T. Mohamed-Brahim, O. Bonnaud, H. Sehil

Solid-State Electronics, 1996, 39 (7), pp.1065-1069.

DOI : https://doi.org/10.1016/0038-1101(95)00409-2