Période 1970 - 2024

Articles

226 - 

Determination of interface state distribution in polysilicon thin film transistors from low frequency -noise measurements: application to analysis of electrical properties

Laurent Pichon, Abdelmalek Boukhenoufa, Christophe Cordier, Bogdan Cretu

Journal of Applied Physics, 2006, 100 (5), pp.54504-54509.

 

227 - 

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

Mariem Zaghdoudi, M. Abdelkrim, M. Fathallah, Tayeb Mohammed-Brahim, Régis Rogel

Materials Science and Engineering: C, 2006, 26 (2-3), pp.177-180.

 

228 - 

Beam-shaping longitudinal range of a binary diffractive optical element

R. de Saint Denis, N. Passilly, M. Laroche, Tayeb Mohammed-Brahim, K. Ait Ameur

Applied optics, 2006, 45 (31), pp.8136-8141.

 

229 - 

Experimental analysis and 2D-simulation of C-V characteristics in Ag/poly(Si)/ITO/glass Schottky diode

M. Amrani, N. Benseddik, Z. Benamara, R. Menezela, M. Chellali, T. Tizi, Tayeb Mohammed-Brahim

Materials Science and Engineering: B, 2005, 121 (1-2), pp.71-76.

 

230 - 

Two-dimensional simulation of the effects of grain boundaries on the C-V characteristics of P+N polysilicon diodes

M. Amrani, Z. Benamara, R. Menezela, A. Boudissa, M. Chellali, Tayeb Mohammed-Brahim, F. Raoult

Journal of Physics D: Applied Physics, 2005, 38 (4), pp.596-603.

 

231 - 

Implementation of random sampling for digital front-end in software radio design

Najib Boumaaz, A. Soulmani, Samuel Crand, Jean-François Diouris, A.A. Ouahman

AMSE, 2005, 6 (1), pp.67.

 

232 - 

Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions

Christophe Cordier, Abdelmalek Boukhenoufa, Laurent Pichon, Jean-François Michaud

Solid-State Electronics, 2005, 49 (8), pp.1376-1380.

 

233 - 

Fabrication of deep single trenches from N-type macroporous silicon

G. Gautier, Laurent Ventura, T. Pordie, Regis Rogel, R. Jérisian

Thin Solid Films, 2005, 487, pp.283-287.

 

234 - 

Solid phase post-treatment of polysilicon films by a continuous argon laser

J.F. Michaud, Régis Rogel, Tayeb Mohammed-Brahim, Michel Sarret, Olivier Bonnaud

Thin Solid Films, 2005, 487, pp.81-84.

 

235 - 

Top-gate microcrystalline silicon TFTs processed at low temperature (<200°c)

Amar Saboundji, Nathalie . Coulon, A. Gorin, Hervé Lhermite, Tayeb Mohammed-Brahim, M. Fonrodona, J. Bertomeu, J. Andreu

Top-gate microcrystalline silicon TFTs processed at low temperature (

 

236 - 

Control of the weak phosphorus doping in polysilicon

Mariem Zaghdoudi, M. Abdelkrim, M. Fathallah, Tayeb Mohammed-Brahim, France Le Bihan

Materials Science Forum, 2005, 480-481, pp.305-308.

 

237 - 

Hall effect magnetic sensors based on Polysilicon TFTs

Erwann Carvou, France Le Bihan, Régis Rogel, Olivier Bonnaud

IEEE Sensors Journal, 2004, vol.4, N° 5, pp.597-602.

 

238 - 

Air-gap polysilicon Thin film transistors on glass substrates

H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, Nathalie . Coulon, Olivier Bonnaud

Sensors and Actuators A: Physical , 2004, 113, p 344-349.

 

239 - 

1-D laser beam shaping using an adjustable binary diffractive optical element

N. Passily, Michael Fromager, Laurence Méchin, C. Gunther, Sandrine Eimer, Tayeb Mohammed-Brahim, Kamel Aït-Ameur

Optics Communications, 2004, 241 (4-6), pp.465-473.

 

240 - 

Thin Film Transistors on Large Single Crystalline Regions of Silicon Induced by cw Laser Crystallization

Amar Saboundji, Tayeb Mohammed-Brahim, G. Andrä, J. Bergmann, F. Falk

Journal of Non-Crystalline Solids, 2004, 338-340, pp.758-761.

 

241 - 

Electrical properties of high value doped polysilicon-based resistors

Erwann Carvou, France Le Bihan, Anne-Claire Salaün, Régis Rogel, Olivier Bonnaud, Y. Rey-Tauriac, X. Gagnard, L. Roland

Solid State Phenomena, 2003, 93, pp.435-440.

 

242 - 

Sensitivity improvement of polysilicon Thin Film Transistor based magnetic sensors

Erwann Carvou, France Le Bihan, Regis Rogel, Olivier Bonnaud

Solid State Phenomena, 2003, 93, pp.459-464.

 

243 - 

Towards Complementary Metal-Oxide Silicon Thin-Film Devices with a New Structure

G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, Olivier Bonnaud

Solid State Phenomena, 2003, 93, pp.429-434.

 

244 - 

Behavior of polysilicon thin film transistors at different temperatures

Jean-François Llibre, H. Toutah, B. Tala-Highil, B. Boudard, Tayeb Mohammed-Brahim, Olivier Bonnaud

Solid State Phenomena, 2003, 93, pp.67-72.

 

245 - 

Behavior of Polysilicon Thin-Film Transistors at Different Temperatures

Jean-François Llibre, H. Toutah, B. Tala-Ighil, B. Boudart, T. Mohammed-Brahim, O. Bonnaud

Solid State Phenomena, 2003, 93, pp.67 - 72.

DOI : https://doi.org/10.4028/www.scientific.net/SSP.93.67

 

246 - 

Silicon films deposited by Low-Pressure Chemical Vapour Deposition for microsystems

H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, F. Bendriaa, France Le Bihan, Olivier Bonnaud

Solid State Phenomena, 2003, 93, pp.453-458.

 

247 - 

Electrical properties of high value doped polysilicon-based resistors

H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, F. Bendriaa, France Le Bihan, Olivier Bonnaud

Solid State Phenomena, 2003, 93, pp.453-458.

 

248 - 

Polycrystalline silicon thin films for MEMS applications

H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, France Le Bihan, Mimoun El Marssi

Thin Solid Films, 2003, 427, pp.422-426.

 

249 - 

Air-gap polycrystalline silicon thin films transistor for fully integrated sensors

H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, Olivier Bonnaud

IEEE Electron Device Letters, 2003, 24 (3), pp.165-167.

 

250 - 

Meyer-Neldel parameter as a figure of merit for quality of thin film transistor active layer?

Laurent Pichon, A. Mercha, Jean-Marc Routoure, Régis Carin, Tayeb Mohammed-Brahim, Olivier Bonnaud

Thin Solid Films, 2003, 427, pp.350-354.