Période 1970 - 2024

Articles

201 - 

Excimer laser crystallization of Microcrystalline Silicon for TFTs on flexible substrate

Tanguy Pier, Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Tayeb Mohammed-Brahim, Hervé Lhermite

Journal of Non-Crystalline Solids, 2008, 354, pp.2513-2518.

 

202 - 

High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

Mariem Zaghdoudi, Régis Rogel, N. Alzaied, M. Fathallah, Tayeb Mohammed-Brahim

Materials Science and Engineering: C, 2008, 28 (5-6), pp.1010-1013.

DOI : https://doi.org/10.1016/j.msec.2007.10.087

 

203 - 

Direct Electrical Detection of Biological Species

Olivier de Sagazan, Maxime Harnois, Aurélie Girard, France Le Bihan, Anne-Claire Salaün, Samuel Crand, Tayeb Mohammed-Brahim

ECS Transactions, 2008, 14, pp.3-10.

 

204 - 

Experimental study and two-dimensional modeling of avalanch breakdown in polycrystalline p-n junctions

M. Amrani, Z. Benamara, M. Chellali, S. Tizi, Tayeb Mohammed-Brahim

Journal of Applied Physics, 2007, 101, pp.104509-1 - 104509-10.

 

205 - 

Improvement of Silicon-Based Thin Film Transistor Performances by Modifying Technological Fabrication Process Steps: a Similar Approach with ULSI Technology

Olivier Bonnaud, Tayeb Mohammed-Brahim

ECS Transactions, 2007, 8 (1), pp.51-56.

 

206 - 

Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology

A. Boukhenoufa, L. Pichon, C. Cordier

Microelectronics Reliability, 2007, 47 (9-11), pp.1419-1423.

DOI : https://doi.org/10.1016/j.microrel.2007.07.059

 

207 - 

Numerical simulation of conduction and low-frequency noise in polysilicon thin film transistors

Abdelmalek Boukhenoufa, Christophe Cordier, Laurent Pichon, Bogdan Cretu

Thin Solid Films, 2007, 515, pp.7556.

DOI : https://doi.org/10.1016/j.tsf.2006.11.162

 

208 - 

Two dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology

Abdelmalek Boukhenoufa, Laurent Pichon, Christophe Cordier

Microelectronics Reliability, 2007, 47, pp.1419.

DOI : https://doi.org/10.1016/j.microrel.2007.07.59

 

209 - 

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Rosine Coq Germanicus, E. Picard, B. Domenges, K. Danilo, R. Rogel

Applied Surface Science, 2007, 253 (14), pp.6006-6012.

DOI : https://doi.org/10.1016/j.apsusc.2006.12.114

 

210 - 

An averaging pixel structure using microcrystalline-silicon films prepared at high temperature for AMOLED displays

Arc'Hanmael Gaillard, Régis Rogel, Samuel Crand, Tayeb Mohammed-Brahim, Christophe Prat, Philippe Leroy

Journal of the Society for Information Display, 2007, 15 (12), pp.1137-1143.

 

211 - 

Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors

Laurent Pichon, Abdelmalek Boukhenoufa, Christophe Cordier, Bogdan Cretu

IEEE Electron Device Letters, 2007, 28 (8), pp.716.

DOI : https://doi.org/10.1109/LED.2007.900849

 

212 - 

Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel

Tanguy Pier, Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Hervé Lhermite, Tayeb Mohammed-Brahim, Jean-François Bergamini

Thin Solid Films, 2007, 515 (19), pp.7585-7589.

DOI : https://doi.org/10.1016/j.tsf.2006.11.164

 

213 - 

Dependence of photovoltaic parameters on grain size and density of states in n+-i-p+ and p+-i-n+ polycrystalline silicon solar cells

B. Zebentout, Z. Benamara, Tayeb Mohammed-Brahim

Thin Solid Films, 2007, 516 (1), pp.84-90.

 

214 - 

Study of mechanical maintain of suspended bridge devices used as pH sensor

F. Bendriaa, France Le Bihan, Anne-Claire Salaün, Tayeb Mohammed-Brahim, Olivier Bonnaud

Journal of Non-Crystalline Solids, 2006, Volume 352, Issues 9-20, pp.1246-1249.

 

215 - 

Study of mechanical maintain of suspended bridge devices used as pH sensor

F. Bendriaa F. Le Bihan A. Salaün T. Mohammed-Brahim And O. Bonnaud

Journal of Non-Crystalline Solids, 2006, Volume 352, Issues 9-20, pp.Pages 1246-1249.

 

216 - 

Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices

H. Colder, R. Rizk, Olivier Bonnaud, Laurent Pichon

Solid-State Electronics, 2006, 50 (2), pp.209-213.

 

217 - 

Frequency effect on the metal/ polysilicon/oxide/silicon capacitance

H. Dib, Z. Benamara, Tayeb Mohammed-Brahim, F. Raoult

Materials Science and Engineering: C, 2006, 26 (2-3), pp.571-573.

 

218 - 

Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1-xGex) deposited by DC magnetron sputtering at high rate

Abdelkrim Fedala, Rabah Cherfi, M. Aoucher, Tayeb Mohammed-Brahim

Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.690-693.

 

219 - 

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by hot wire cvd on glass substrate

M. Fondorona, D. Soler, J. Escarre, F. Villar, J. Bertomeu, J. Andreu, Amar Saboundji, Nathalie . Coulon, Tayeb Mohammed-Brahim

Thin Solid Films, 2006, 501, pp.303-306.

 

220 - 

Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors

R. Gharbi, M. Abdelkrim, M. Fathallah, E. Tresso, S. Ferrero, C.F. Pirri, Tayeb Mohammed-Brahim

Solid-State Electronics, 2006, 50, pp.367-371.

 

221 - 

Improved microcrystalline silicon tfts

Khalid Kandoussi, Arc'Hanmael Gaillard, Claude Simon, Nathalie . Coulon, Tanguy Pier, Tayeb Mohammed-Brahim

Journal of Non-Crystalline Solids, 2006, 352 (9-20), pp.1728-1731.

 

222 - 

Undoped and arsenic doped low temperature (165°C) microcrystalline silicon for electronic device process

Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Tayeb Mohammed-Brahim, Alain Moréac

Journal of Non-Crystalline Solids, 2006, 352 (9-20), pp.968-971.

 

223 - 

Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors

H. Mahfoz-Kotb, Anne-Claire Salaün, F. Bendriaa, France Le Bihan, Tayeb Mohammed-Brahim, J.R. Morante

Sensors and Actuators B: Chemical, 2006, Vol 118, issue1-2, pp.243-248.

 

224 - 

CW argon laser crystallization of silicon films: structural properties

J.F. Michaud, Régis Rogel, Tayeb Mohammed-Brahim, Michel Sarret

Journal of Non-Crystalline Solids, 2006, 352 (9-20), pp.998-1002.

 

225 - 

Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties

L. Pichon, A. Boukhenoufa, C. Cordier, B. Cretu

Journal of Applied Physics, 2006, 100 (5), pp.054504.

DOI : https://doi.org/10.1063/1.2335395