Période 1970 - 2024

Articles

76 - 

Nondestructive Redox Quantification Reveals Glassmaking of Rare French Gothic Stained Glasses

Myrtille Hunault, Claudine Loisel, Fanny Bauchau, Quentin Lemasson, Claire Pacheco, Laurent Pichon, Brice Moignard, Karine Boulanger, Michel Hérold, Georges Calas, Isabelle Pallot-Frossard

Analytical Chemistry, 2017, 89 (11), pp.6277-6284.

DOI : https://doi.org/10.1021/acs.analchem.7b01452

 

77 - 

Morphological impact of insulator on inkjet-printed transistor

Sjeung Jae Moon, Malo Robin, Kuai Wenlin, Molard Yann, Byung Seong Bae, Tayeb Mohammed-Brahim, Emmanuel Jacques, Maxime Harnois

Flexible and Printed Electronics, 2017, 2 (3), pp.035008.

DOI : https://doi.org/10.1088/2058-8585/aa8760

 

78 - 

Conformal Electronics Wrapped Around Daily-life Objects Using Original Method: Water Transfer Printing.

Brice Le Borgne, Olivier de Sagazan, Samuel Crand, Emmanuel Jacques, Maxime Harnois

Conformal Electronics Wrapped Around Daily-life Objects Using Original Method: Water Transfer Printing. ACS Applied Materials & Interfaces, 2017, 9 (35), pp.29424-29429.

DOI : https://doi.org/10.1021/acsami.7b07327

Pubmed : 28831803

 

79 - 

Polymer resonators sensors for detection of sphingolipid gel/fluid phase transition and melting temperature measurement

Qingyue Li, Véronique Vié, Hervé Lhermite, Etienne Gaviot, Claire Bourlieu-Lacanal, Alain Moréac, Denis Morineau, Didier Dupont, Sylvie Beaufils, Bruno Bêche

Sensors and Actuators A: Physical , 2017, 263, pp.707-717.

DOI : https://doi.org/10.1016/j.sna.2017.07.037

 

80 - 

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

N. Ouldhamadouche, A. Achour, K. Ait. Aissa, M. Islam, A. Ahmadpourian, A. Arman, M. A. Soussou, M. Chaker, L. Le Brizoual, M. A. Djouadi

Thin Solid Films, 2017, 622, pp.23--28.

DOI : https://doi.org/10.1016/j.tsf.2016.12.018

 

81 - 

Electron-Deficient Dihydroindaceno-Dithiophene Regioisomers for n-Type Organic Field-Effect Transistors

Jean-David Peltier, Benoît Heinrich, Bertrand Donnio, Joëlle Rault-Berthelot, Emmanuel Jacques, Cyril Poriel

ACS Applied Materials & Interfaces, 2017, 9 (9), pp.8219-8232.

DOI : https://doi.org/10.1021/acsami.6b16333

Pubmed : 28192671

 

82 - 

Electron-Rich 4-Substituted Spirobifluorenes: Toward a New Family of High Triplet Energy Host Materials for High-Efficiency Green and Sky Blue Phosphorescent OLEDs

Cassandre Quinton, Sébastien Thiery, Olivier Jeannin, Denis Tondelier, Bernard Geffroy, Emmanuel Jacques, Joëlle Rault-Berthelot, Cyril Poriel

ACS Applied Materials & Interfaces, 2017, 9 (7), pp.6194-6206.

DOI : https://doi.org/10.1021/acsami.6b14285

Pubmed : 28111937

 

83 - 

Spontaneous Buckling of Multiaxially Flexible and Stretchable Interconnects Using PDMS/Fibrous Composite Substrates

Régis Rogel, Brice Le Borgne, Tayeb Mohammed-Brahim, Emmanuel Jacques, Maxime Harnois

Advanced Materials Interfaces, 2017, 4 (3), pp.1600946.

DOI : https://doi.org/10.1002/admi.201600946

 

84 - 

Simulation and fabrication of silicon nitride microring resonator by DUV lithography

Giuseppe A Cirino, Luis A Barea, Antonio A von Zuben, Hervé Lhermite, Bruno Bêche, Olivier de Sagazan, Newton Frateschi, Tayeb M-Brahim

IEEE conference publications, 2016, pp.1 - 4.

DOI : https://doi.org/10.1109/SBMicro.2016.7731346

 

85 - 

Characterization of in-situ doped polycrystalline silicon using Schottky diodes and admittance spectroscopy

H. Ayed, L. Béchir, M. Benabdesslem, N. Benslim, L. Mahdjoubi, T. Mohammed-Brahim, A. Hafdallah, M.S. Aida

Journal of Nano and Electronic Physics, 2016, 8, pp.01038.

 

86 - 

Microcrystalline Silicon Based TFTs and Resistors for Reliable Flexible Electronics,

Yannick Kervran, Kandoussi K., Hanpeng Dong, S. Janfaoui, Nathalie . Coulon, Claude Simon, Emmanuel Jacques, Mohammed-Brahim Tayeb

Microcrystalline Silicon Based TFTs and Resistors for Reliable Flexible Electronics. ECS Transactions, 2016, 75 (10) (13-25).

 

87 - 

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

Brice Le Borgne, Anne-Claire Salaün, Laurent Pichon

Microelectronic Engineering, 2016, 150, pp.32-38.

DOI : https://doi.org/10.1016/j.mee.2015.11.001

 

88 - 

Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

Brice Le Borgne, Laurent Pichon, M. Thomas, Anne-Claire Salaün

physica status solidi (a), 2016, 213 (11), pp.2890--2894.

DOI : https://doi.org/10.1002/pssa.201600375

 

89 - 

Luminescence at 2.8 μm: Er3+-doped chalcogenide micro-waveguide

Virginie Nazabal, F. Starecki, J. -L. Doualan, P. Němec, P. Camy, H. Lhermite, Loïc Bodiou, M. L. Anne, Joël Charrier, Jean-Luc Adam

Optical Materials, 2016, 58, pp.390--397.

DOI : https://doi.org/10.1016/j.optmat.2016.06.009

 

90 - 

D’AGLAE à New AGLAE

Claire Pacheco, Quentin Lemasson, Brice Moignard, Laurent Pichon, Marie Radepont, Didier Gourier

Technè, 2016, 43, pp.63-69.

DOI : https://doi.org/10.4000/techne.689

 

91 - 

Improvement of n-type OTFT electrical stability by gold electrode modification

M. Robin, M. Harnois, Y. Molard, E. Jacques

Organic Electronics, 2016, 39, pp.214--221.

DOI : https://doi.org/10.1016/j.orgel.2016.10.004

 

92 - 

Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

Amine Achour, Raul Lucio Porto, Mohamed-Akram Soussou, Mohammad Islam, Mohammed Boujtita, Kaltouma Ait Aissa, Laurent Le Brizoual, Abdou Djouadi, Thierry Brousse

Journal of Power Sources, 2015, 300, pp.525 - 532.

DOI : https://doi.org/10.1016/j.jpowsour.2015.09.012

 

93 - 

Field effect transistor with integrated microfluidic channel as pH sensor

Ismaïl Bouhadda, Olivier de Sagazan, France Le Bihan

Microsystem Technologies, 2015, 21 (1), pp.289-294.

DOI : https://doi.org/10.1007/s00542-014-2125-8

 

94 - 

A laterally coupled UV210 polymer racetrack micro-resonator for thermal tunability and glucose sensing capability

R Castro-Beltrán, Nolwenn Huby, V. Vié, H Lhermite, Lionel Camberlein, Etienne Gaviot, Bruno Bêche

Advanced Device Materials, 2015, 1 (3), pp.80-87.

DOI : https://doi.org/10.1080/20550308.2015.1133100

 

95 - 

Highly flexible microcrystalline silicon n-type TFT on PEN bent to a curvature radius of 0.75 mm

Hanpeng Dong, Yannick Kervran, Nathalie . Coulon, Olivier de Sagazan, Emmanuel Jacques, Tayeb Mohammed-Brahim

IEEE Transactions on Electron Devices, 2015, 62 (10), pp.3278-3284.

 

96 - 

Microstructure based optical modeling of ZnO- porous silicon permeated nanocomposites

G Gallach, L Le Brizoual, Gaël Gautier, M D Ynsa, V Torres Costa, G Ceccone, Jean-Pierre Landesman, M Manso Silván

Journal of Physics D: Applied Physics, 2015, 48 (29),

DOI : https://doi.org/10.1088/0022-3727/48/29/295102

 

97 - 

Microcrystalline silicon: Strain gauge and sensor arrays on flexible substrate for the measurement of high deformations

Y. Kervran, O. de Sagazan, S. Crand, N. Coulon, T. Mohammed-Brahim, O Brel

Sensors and Actuators A: Physical , 2015, 236, pp.273--280.

DOI : https://doi.org/10.1016/j.sna.2015.08.001

 

98 - 

Electrical properties of phosphorus in situ doped Au-catalyst vapor liquid solid silicon nanowires

Laurent Pichon, Rogel R., Emmanuel Jacques

Journal of Applied Physics, 2015, 118 (18), pp.185701.

DOI : https://doi.org/10.1063/1.4935278

 

99 - 

Epoxy based ink as versatile material for inkjet-printed devices

Malo Robin, Wenlin Kuai, Maria Amela-Cortes, Stéphane Cordier, Yann Molard, Tayeb Mohammed-Brahim, Emmanuel Jacques, Maxime Harnois

ACS Applied Materials & Interfaces, 2015, 7 (39), pp.21975-21984.

DOI : https://doi.org/10.1021/acsami.5b06678

Pubmed : 26372334

 

100 - 

Structure properties relationship study of electron-deficient dihydroindeno [2,1-b]fluorene derivatives for n-type Organic Field Effect Transistors.

Maxime Romain, Michèle Chevrier, Sarah Bebiche, Tayeb Mohammed-Brahim, Joëlle Rault-Berthelot, Emmanuel Jacques, Cyril Poriel

Structure properties relationship study of electron-deficient dihydroindeno [2,1-b]fluorene derivatives for n-type Organic Field Effect Transistors. Journal of Materials Chemistry C, 2015, 3 (22), pp.5742-5753.

DOI : https://doi.org/10.1039/C5TC00355E