Période 1970 - 2024

Articles

176 - 

N- and P-type top-gate microcrystalline silicon TFTs processed at low temperature (T<200° C) on the same glass substrate

Ismaïl Souleiman, Khalid Kandoussi, Khaled Belarbi, Rabah Cherfi, Abdelkrim Fedala, Nathalie . Coulon, Claude Simon, Tayeb Mohammed-Brahim

N- and P-type top-gate microcrystalline silicon TFTs processed at low temperature (T

DOI : https://doi.org/10.1002/pssc.200982690

 

177 - 

Humidity Sensor Thanks Array of Suspended Gate Field Effect Transistor

Bruno da Silva Rodrigues, Olivier de Sagazan, Anne-Claire Salaün, Samuel Crand, France Le Bihan, Olivier Bonnaud, Tayeb Mohammed-Brahim, N. Morimoto

ECS Transactions, 2010, Vol. 31 (Issue 1), pp.441-448.

 

178 - 

Chalcogenide Glass Optical Waveguides for Infrared Biosensing

Marie-Laure Anne, Julie Keirsse, Virginie Nazabal, Koji Hyodo, Satoru Inoue, Catherine Boussard-Pledel, Hervé Lhermite, Joël Charrier, Kiyoyuki Yanakata, Olivier Loreal, Jenny Le Person, Florent Colas, Chantal Compère, Bruno Bureau

Sensors, 2009, 9 (9), pp.7398 - 7411.

DOI : https://doi.org/10.3390/s90907398

 

179 - 

Chalcogenide Glass Optical Waveguides for Infrared Biosensing

Marie-Laure Anne, Julie Keirsse, Virginie Nazabal, Koji Hyodo, Satoru Inoue, Catherine Boussard-Plédel, Hervé Lhermite, Joël Charrier, Kiyoyuki Yanakata, Olivier Loréal, Jenny Le Person, Florent Colas, Cantal Compère, Bruno Bureau

Sensors, 2009, 9 (9), pp.7398-7411.

DOI : https://doi.org/10.3390/s90907398

 

180 - 

2D-modelling for the simulation of current voltage characteristics in polysilicon Schottky diode deposited by LPCVD and SAPCVD methods

N. Benseddik, M. Amrani, Z. Benamara, Tayeb Mohammed-Brahim

International Journal of nanoelctronics and materials, 2009, 2 (1), pp.75-89.

 

181 - 

Improvement of polycrystalline silicon-Based Thin Film Transistor Performances by Modifying Technological Fabrication Process

Olivier Bonnaud, Tayeb Mohammed-Brahim

Journal of Applied Physics, 2009, 96 (1), pp.259-269.

 

182 - 

Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputteringcharacteristic

Rabah Cherfi, A. Abdelmoumene, M. Kechouane, A. Rahal, M. Aoucher, Tayeb Mohammed-Brahim

physica status solidi (a), 2009, 2006 (7), pp.1504-1509.

 

183 - 

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Yvon Cordier, Aude Le Cotonnec, Sébastien Chenot, Nicolas Baron, Nacer Farih, Marie-Paule Besland, Antoine Goullet, Mario El Kazzi, Philippe Regreny, Guy Hollinger, Hervé Lhermite

physica status solidi (c), 2009, 6 (S2), pp.S1016-S1019.

DOI : https://doi.org/10.1002/pssc.200880870

 

184 - 

Stepwise functionalization of SiNx surfaces for covalent immobilization of antibodies

Stéphanie Dauphas, Soraya Ababou-Girard, Aurélie Girard, France Le Bihan, Tayeb Mohammed-Brahim, Véronique Vie, Anne Corlu, Christiane Guguen-Guillouzo, Olivier Lavastre, Florence Geneste

Thin Solid Films, 2009, 517, pp.6016-6022.

 

185 - 

Fabrication of polycrystalline silicon nanowires using conventional UV lithography

Fouad Demami, Laurent Pichon, Régis Rogel, Anne-Claire Salaün

Materials Science and Engineering, 2009, 6 (1), pp.ID 012014.

DOI : https://doi.org/10.1088/1757-899X/6/1/012014

 

186 - 

Hall Effect-Based Microsystem for Position Detection in Polysilicon Thin Film Technology

Emmanuel Jacques, France Le Bihan, Samuel Crand, Tayeb Mohammed-Brahim

Sensor letters, 2009, 7, pp.466-469.

 

187 - 

Fabrication and electrical characterization of silicon nanowires based resistors

Liang Ni, Fouad Demami, Régis Rogel, Anne-Claire Salaün, Laurent Pichon

Materials Science and Engineering, 2009, 6 (1), pp.ID 012013.

DOI : https://doi.org/10.1088/1757-899X/6/1/012013

 

188 - 

Improvement in the determination by 1/f noise measurements of the interface state distribution in polysilicon TFTs in relation with the compensation law of Meyer Neldel

Laurent Pichon, Abdelmalek Boukhenoufa, Bogdan Cretu, Regis Rogel

Journal of Applied Physics, 2009, 105, pp.104503.

DOI : https://doi.org/10.1063/1.3126706

 

189 - 

THERMAL DEPENDENCE OF LOW-FREQUENCY NOISE IN POLYSILICON THIN FILM TRANSISTORS

Laurent Pichon, Bogdan Cretu, Abdelmalek Boukhenoufa

Thin Solid Films, 2009, 517, pp.6367.

DOI : https://doi.org/10.1016/j.tsf.2009.02.055

 

190 - 

A liquid crystal tunable ultra-thin Fabry-Perot resonator in Ka-band

N. Tentillier, F. Krasinski, Ronan Sauleau, B. Splingart, Hervé Lhermite, Philippe Coquet

IEEE Antennas and Wireless Propagation Letters, 2009, 8, pp.701-704.

DOI : https://doi.org/10.1109/LAWP.2009.2025150

 

191 - 

Sensitive continuous monitoring of PH thanks to matrix of several suspended gate field effect transistors

Bruno da Silva Rodrigues, Olivier de Sagazan, Samuel Crand, France Le Bihan, Olivier Bonnaud, Tayeb Mohammed-Brahim, N. Morimoto

ECS Transactions, 2009, 23 (1), pp.203-209.

 

192 - 

Stability of microcrystalline silicon TFTs

Khaled Belarbi, Khalid Kandoussi, Nathalie . Coulon, Claude Simon, Rabah Cherfi, Abdelkrim Fedala, Tayeb Mohammed-Brahim

ECS Transactions, 2008, 16 (9), pp.121-130.

 

193 - 

Analog circuits design using polycrystalline silicon TFTs

Emmanuel Jacques, France Le Bihan, Samuel Crand, Tayeb Mohammed-Brahim

ECS Transactions, 2008, 16, pp. 393.

 

194 - 

Nanocrystalline silicon TFT process using silane diluted in argon-hydrogen mixtures

Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Khaled Belarbi, Tayeb Mohammed-Brahim

Journal of Non-Crystalline Solids, 2008, 354, pp.2513-2518.

 

195 - 

SGFET as charge sensor: Application to chemical and biological species detection

Tayeb Mohammed-Brahim, Anne-Claire Salaün, France Le Bihan

Sensors and Transducer Journal, 2008, 90, pp. 11-26.

 

196 - 

Issues in microcrystalline silicon TFTs processed at T<200°C

Tayeb Mohammed-Brahim, Khalid Kandoussi, Nathalie . Coulon, Claude Simon

Issues in microcrystalline silicon TFTs processed at T

 

197 - 

Chalcogenide coatings of Ge15Sb20S65 and Te20As30Se50

Virginie Nazabal, Michel Cathelinaud, Weidong Shen, Petr Nemec, Frédéric Charpentier, Hervé Lhermite, Marie-Laure Anne, Jérémie Capoulade, Fabien Grasset, Alain Moréac, Satoru Inoue, Miloslav Frumar, Jean-Luc Adam, Michel Lequime, Claude Amra

Applied optics, 2008, 47 (13), pp.C114-C123.

DOI : https://doi.org/10.1364/AO.47.00C114

 

198 - 

Low frequency Noise in Polysilicon Thin Film Transistors: Effect of the Laser Annealing of the Active Layer

Laurent Pichon, Abdelmalek Boukhenoufa, Christophe Cordier

physica status solidi (c), 2008, 5 (10), pp.3271.

 

199 - 

Low frequency noise in polysilicon thin film transistors: effect of the laser annealing of the active layer

Laurent Pichon, Christophe Cordier, Abdelmalek Boukhenoufa

physica status solidi (c), 2008, 5 (10), pp.3271.

DOI : https://doi.org/10.1002/pssc.200779510

 

200 - 

Excimer laser annnealing of microcrystalline silicon

Tanguy Pier, Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Tayeb Mohammed-Brahim, Hervé Lhermite

physica status solidi (c), 2008, 5 (10), pp.3234-3238.

DOI : https://doi.org/10.1002/pssc.200879513