@article{talaighil:hal-03662130,
TITLE = {Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors},
AUTHOR = {Tala-Ighil, B. and Toutah, H. and Rahal, A. and Mourgues, K. and Pichon, L. and Raoult, F. and Bonnaud, O. and Mohammed-Brahim, T.},
URL = {https://hal.science/hal-03662130},
JOURNAL = {Microelectronics Reliability},
PUBLISHER = {Elsevier},
VOLUME = {38},
NUMBER = {6-8},
PAGES = {1149-1153},
YEAR = {1998},
MONTH = Jun, DOI = {10.1016/S0026-2714(98)00098-5},
HAL_ID = {hal-03662130},
HAL_VERSION = {v1},
}