@article{mohammedbrahim:hal-00934150,
TITLE = {Study of the stability of polycristalline silicon by means of the behavior of thin film transistors under gate bias stress},
AUTHOR = {Mohammed-Brahim, Tayeb and Rahal, A. and Gautier, G. and Raoult, F. and Toutah, H. and Tala-Ighil, B. and Llibre, Jean-Fran{\c c}ois},
URL = {https://hal.science/hal-00934150},
JOURNAL = {Journal of Non-Crystalline Solids},
PUBLISHER = {Elsevier},
VOLUME = {299-302},
PAGES = {497-501},
YEAR = {2002},
MONTH = Apr, HAL_ID = {hal-00934150},
HAL_VERSION = {v1},
}