@article{pichon:hal-03662112,
TITLE = {Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors},
AUTHOR = {Pichon, L. and Raoult, F. and Mohamed-Brahim, T. and Bonnaud, O. and Sehil, H.},
URL = {https://hal.science/hal-03662112},
JOURNAL = {Solid-State Electronics},
PUBLISHER = {Elsevier},
VOLUME = {39},
NUMBER = {7},
PAGES = {1065-1069},
YEAR = {1996},
MONTH = Jul, DOI = {10.1016/0038-1101(95)00409-2},
HAL_ID = {hal-03662112},
HAL_VERSION = {v1},
}