@article{zaghdoudi:hal-00444290,
TITLE = {High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer},
AUTHOR = {Zaghdoudi, Mariem and Rogel, R{\'e}gis and Alzaied, N. and Fathallah, M. and Mohammed-Brahim, Tayeb},
URL = {https://hal.science/hal-00444290},
JOURNAL = {Materials Science and Engineering: C},
PUBLISHER = {Elsevier},
VOLUME = {28},
NUMBER = {5-6},
PAGES = {1010-1013},
YEAR = {2008},
MONTH = Jul, DOI = {10.1016/j.msec.2007.10.087},
HAL_ID = {hal-00444290},
HAL_VERSION = {v1},
}