@article{leborgne:hal-01240772,
TITLE = {Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors},
AUTHOR = {Le Borgne, Brice and Sala{\"u}n, Anne-Claire and Pichon, Laurent},
URL = {https://univ-rennes.hal.science/hal-01240772},
JOURNAL = {Microelectronic Engineering},
PUBLISHER = {Elsevier},
VOLUME = {150},
PAGES = {32--38},
YEAR = {2016},
MONTH = Jan, DOI = {10.1016/j.mee.2015.11.001},
KEYWORDS = {CMOS technology ; Gate-all-around ; Mosfet ; Polycrystalline silicon ; Si-nanowires},
PDF = {https://univ-rennes.hal.science/hal-01240772/file/Electrical%20properties%20of%20self-aligned%20gate-all-around_accepted.pdf},
HAL_ID = {hal-01240772},
HAL_VERSION = {v1},
}