@incollection{munteanu:hal-04400965,
TITLE = {Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation},
AUTHOR = {Munteanu, Daniela and Autran, Jean-Luc},
URL = {https://hal.science/hal-04400965},
BOOK
TITLE = {Advances in Semiconductor Physics and Devices},
PUBLISHER = {IntechOpen},
YEAR = {2024},
MONTH = Jan, DOI = {10.5772/intechopen.1003991},
KEYWORDS = {complementary metal-oxide semiconductor (CMOS) ; critical charge ; diffusion-collection ; metal-oxide-semiconductor field-effect transistor (MOSFET) ; radiation effects ; semiconductor ; single event effects (SEE) ; soft error rate (SER)},
PDF = {https://hal.science/hal-04400965/file/Chapter_2024_Munteanu_Autran_HAL.pdf},
HAL_ID = {hal-04400965},
HAL_VERSION = {v1},
}