@article{autran:hal-04241142,
TITLE = {New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices},
AUTHOR = {Autran, Jean-Luc and Munteanu, Daniela},
URL = {https://amu.hal.science/hal-04241142},
JOURNAL = {Journal of Applied Physics},
PUBLISHER = {American Institute of Physics},
VOLUME = {134},
NUMBER = {17},
PAGES = {175701},
YEAR = {2023},
DOI = {10.1063/5.0156698},
KEYWORDS = {Diffusion ; Charge recombination ; Diffusion current ; Metal-oxide-semiconductor ; P-N junctions ; Semiconductor devices ; C-MOS ; Ohmic contacts ; Ionizing radiation ; Numerical methods},
PDF = {https://amu.hal.science/hal-04241142/file/JAP_Autran_Munteanu_HAL.pdf},
HAL_ID = {hal-04241142},
HAL_VERSION = {v1},
}