@article{samb:hal-04163697,
TITLE = {Benefits from Using Very Thin Channel Layer for TFTs},
AUTHOR = {Samb, Mamadou Lamine and Jacques, Emmanuel and Maiga, Amadou Seidou and Mohammed-Brahim, Tayeb},
URL = {https://hal.science/hal-04163697},
JOURNAL = {Electronics},
PUBLISHER = {MDPI},
VOLUME = {12},
NUMBER = {12},
PAGES = {2694},
YEAR = {2023},
DOI = {10.3390/electronics12122694},
KEYWORDS = {channel layer ; crystallinity ; electrical stability ; gate insulator ; thin film transistor},
PDF = {https://hal.science/hal-04163697/file/electronics-12-02694.pdf},
HAL_ID = {hal-04163697},
HAL_VERSION = {v1},
}