@inproceedings{laspeyres:hal-04058326,
TITLE = {Syst{\`e}me de mesure de la tension Drain-Source {\`a} l'{\'e}tat passant: application aux modules SiC forte tension},
AUTHOR = {Laspeyres, Antoine and Descamps, Anne-Sophie and Batard, Christophe and Ginot, Nicolas},
URL = {https://hal.science/hal-04058326},
BOOK
TITLE = {Symposium de G{\'e}nie Electrique - SGE 2023},
ADDRESS = {Lille, France},
PAGES = {sciencesconf.org:sge2023:443123},
YEAR = {2023},
MONTH = Jul, KEYWORDS = {Silicon carbide (SiC), Source Driver Topology, Onstate voltage measurement circuit, Semiconductor device reliability},
HAL_ID = {hal-04058326},
HAL_VERSION = {v1},
}
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