@inproceedings{bestelink:hal-04056480,
TITLE = {Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius},
AUTHOR = {Bestelink, Eva and Fustec, Jean-Charles and Sagazan, Olivier De and Teng, Hao-Jing and Sporea, Radu A.},
URL = {https://hal.science/hal-04056480},
BOOK
TITLE = {2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)},
ADDRESS = {Vienna, Austria},
PUBLISHER = {IEEE},
SERIES = {2022 IEEE INTERNATIONAL CONFERENCE ON FLEXIBLE AND PRINTABLE SENSORS AND SYSTEMS (IEEE FLEPS 2022)},
YEAR = {2022},
MONTH = Jul, DOI = {10.1109/FLEPS53764.2022.9781587},
KEYWORDS = {thin-film transistor ; Schottky barrier ; source-gated transistor ; bending stress},
HAL_ID = {hal-04056480},
HAL_VERSION = {v1},
}