@article{zhang:hal-03776594,
TITLE = {Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode},
AUTHOR = {Zhang, Peng and Jacques, Emmanuel and Rogel, Regis and Pichon, Laurent and Bonnaud, Olivier},
URL = {https://hal.science/hal-03776594},
JOURNAL = {Journal of Electronic Materials},
PUBLISHER = {Institute of Electrical and Electronics Engineers},
VOLUME = {51},
NUMBER = {10},
PAGES = {5635-5643},
YEAR = {2022},
MONTH = Oct, DOI = {10.1007/s11664-022-09818-x},
PDF = {https://hal.science/hal-03776594/file/Zhang%20et%20al_2022_Modeling%20of%20high-current%20polycrystalline%20silicon%20thin%20film%20transistors%20by%20incorporating%20buried%20electrode.pdf},
HAL_ID = {hal-03776594},
HAL_VERSION = {v1},
}