@techreport{beche:hal-03251268,
TITLE = {Characterization of Group III-Nitride (GaN, AlGaN, InGaN) and modelization via the virtual interface model of the in situ general incidence reflectance in multilayers during MOCVD process},
AUTHOR = {B{\^e}che, Bruno},
URL = {https://hal.science/hal-03251268},
TYPE = {Research Report},
INSTITUTION = {‘NTT Basic Research Laboratories', Vapor Phase Epitaxy Research group},
YEAR = {1998},
MONTH = Aug, HAL_ID = {hal-03251268},
HAL_VERSION = {v1},
}