@article{zhang:hal-03195846,
TITLE = {In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors},
AUTHOR = {Zhang, P. and Jacques, Emmanuel and Rogel, R. and Pichon, Laurent and Bonnaud, O.},
URL = {https://hal.science/hal-03195846},
JOURNAL = {Solid-State Electronics},
PUBLISHER = {Elsevier},
VOLUME = {178},
PAGES = {107981},
YEAR = {2021},
MONTH = Apr, DOI = {10.1016/j.sse.2021.107981},
KEYWORDS = {Density of states ; Grain boundary barrier ; Polycrystalline silicon ; Pseudo-subthreshold region ; Vertical thin film transistor},
PDF = {https://hal.science/hal-03195846/file/Zhang%20et%20al.%20-%202021%20-%20In-depth%20analysis%20of%20Electrical%20Characteristics%20fo.pdf},
HAL_ID = {hal-03195846},
HAL_VERSION = {v1},
}