@article{weckbrodt:hal-03154976,
TITLE = {Monitoring of gate leakage current on SiC power MOSFETs: an estimation method for smart gate drivers},
AUTHOR = {Weckbrodt, Julien and Ginot, Nicolas and Batard, Christophe and Azzopardi, Stephane},
URL = {https://hal.science/hal-03154976},
JOURNAL = {IEEE Transactions on Power Electronics},
PUBLISHER = {Institute of Electrical and Electronics Engineers},
VOLUME = {36},
NUMBER = {8},
PAGES = {8752 - 8760},
YEAR = {2021},
MONTH = Aug, DOI = {10.1109/TPEL.2021.3056648},
KEYWORDS = {silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistor (MOSFET) ; smart gate drivers. ; Driver circuits ; leakage currents ; power system monitoring ; semiconductor device reliability},
PDF = {https://hal.science/hal-03154976/file/Monitoring_of_Gate_Leakage_Current_on_SiC_Power_MOSFETs_An_Estimation_Method_for_Smart_Gate_Drivers.pdf},
HAL_ID = {hal-03154976},
HAL_VERSION = {v1},
}