@article{batard:hal-02437157,
TITLE = {Design of a gate driver for SiC MOSFET module for applications up to 1200 V},
AUTHOR = {Batard, Christophe and Ginot, Nicolas and Bouguet, Christophe},
URL = {https://hal.science/hal-02437157},
JOURNAL = {IET Power Electronics},
PUBLISHER = {The Institution of Engineering and Technology},
VOLUME = {13},
NUMBER = {7},
PAGES = {ID PAPER PEL-2019-0422},
YEAR = {2020},
MONTH = May, DOI = {10.1049/iet-pel.2019.0422},
HAL_ID = {hal-02437157},
HAL_VERSION = {v1},
}