@inproceedings{gerard:hal-02291428,
TITLE = {Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer},
AUTHOR = {G{\'e}rard, Sol{\`e}ne and Mokhtari, Merwan and Landesman, Jean-Pierre and Levallois, Christophe and Fouchier, Marc and Pargon, Erwine and Rochat, N{\'e}vine and Pagnod-Rossiaux, Philippe and Laruelle, Francois and Cassidy, Daniel T and Jimenez, Juan and Torres, Alfredo},
URL = {https://hal.science/hal-02291428},
BOOK
TITLE = {18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII)},
ADDRESS = {Berlin, Germany},
YEAR = {2019},
MONTH = Sep, HAL_ID = {hal-02291428},
HAL_VERSION = {v1},
}