@inproceedings{hamdoun:hal-02281675,
TITLE = {Large signal and analytic non-linear modelling of GaN HEMT-based varactors},
AUTHOR = {Hamdoun, A. and Himdi, Mohamed and Roy, L. and Lafond, O.},
URL = {https://univ-rennes.hal.science/hal-02281675},
BOOK
TITLE = {2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019},
ADDRESS = {Xi'an, China},
PUBLISHER = {Institute of Electrical and Electronics Engineers Inc.},
PAGES = {8754408},
YEAR = {2019},
MONTH = Jun, DOI = {10.1109/EDSSC.2019.8754408},
KEYWORDS = {Gallium nitride (GaN) technology ; HEMTs ; MMIC ; Semiconductor device modeling ; Varactor diode},
HAL_ID = {hal-02281675},
HAL_VERSION = {v1},
}