@article{herbecq:hal-02277752,
TITLE = {Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors},
AUTHOR = {Herbecq, Nicolas and Roch-Jeune, Isabelle and Linge, Astrid and Zegaoui, Malek and Jeannin, Pierre-Olivier and Rouger, Nicolas Cl{\'e}ment, Jean-Paul and Medjdoub, F},
URL = {https://hal.science/hal-02277752},
JOURNAL = {physica status solidi (a)},
PUBLISHER = {Wiley},
VOLUME = {213},
NUMBER = {4},
PAGES = {873--877},
YEAR = {2016},
DOI = {10.1002/pssa.201532572},
HAL_ID = {hal-02277752},
HAL_VERSION = {v1},
}