@inproceedings{salaun:hal-02042765,
TITLE = {Dual-gate and gate-ail-around polycrystalline silicon nanowires field effect transistors Simulation and characterization},
AUTHOR = {Sala{\"u}n, Anne-Claire and Le Borgne, Brice and Pichon, Laurent},
URL = {https://univ-rennes.hal.science/hal-02042765},
BOOK
TITLE = {Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting},
ADDRESS = {Cancun, Mexico},
EDITOR = {Kuo Y.},
PUBLISHER = {Electrochemical Society Inc.},
VOLUME = {86},
NUMBER = {11},
PAGES = {79-88},
YEAR = {2018},
MONTH = Sep, DOI = {10.1149/08611.0079ecst},
KEYWORDS = {Field effect transistors ; Surrounding gate transistors ; Silicon Technologies ; Semiconducting nanowires ; Fabrication process ; Electrons and holes ; Electrical performance ; Dual-gate structure ; Complementary metal oxide semiconductors ; Threshold voltage ; Thin film transistors ; Temperature ; Polysilicon ; Polycrystalline materials ; Oxide semiconductors ; Nanowires ; Metals ; MOS devices ; CMOS integrated circuits},
HAL_ID = {hal-02042765},
HAL_VERSION = {v1},
}