@inproceedings{lucci:hal-01910554,
TITLE = {A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy},
AUTHOR = {Lucci, Ida and Charbonnier, Simon and Pedesseau, Laurent and Vallet, Maxime and Cerutti, Laurent and Rodriguez, Jean-Baptiste and Tourni{\'e},
Eric and Bernard, Rozenn and L{\'e}toublon, Antoine and Bertru, Nicolas and Le Corre, Alain and Rennesson, Stephanie and Semond, Fabrice and Patriarche, Gilles and Largeau, Ludovic and Turban, Pascal and Ponchet, Anne and Cornet, C.},
URL = {https://hal.science/hal-01910554},
BOOK
TITLE = {20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018)},
ADDRESS = {Shanghai, China},
PAGES = {Th-C1-3(S)},
YEAR = {2018},
MONTH = Sep, HAL_ID = {hal-01910554},
HAL_VERSION = {v1},
}