@article{bebiche:hal-01881024,
TITLE = {Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene-dihydroindenofluorene semiconductors},
AUTHOR = {Bebiche, S. and Cisneros-Perez, P.A. and Mohammed-Brahim, T. and Harnois, M. and Rault-Berthelot, J. and Poriel, Cyril and Jacques, E.},
URL = {https://univ-rennes.hal.science/hal-01881024},
JOURNAL = {Materials Chemistry Frontiers},
PUBLISHER = {Royal Society of Chemistry},
VOLUME = {2},
NUMBER = {9},
PAGES = {1631-1641},
YEAR = {2018},
DOI = {10.1039/c8qm00193f},
KEYWORDS = {Insulator Charge Trapping ; Gate Bias Stress ; Dicyanovinylene-Dihydroindenofluorene ; Leakage Current ; n-type Organic Field-Effect Transistors ; Electrical Instability},
PDF = {https://univ-rennes.hal.science/hal-01881024/file/Publi%20sarah%20remodelage%20cyrilVManu-final%20revised.pdf},
HAL_ID = {hal-01881024},
HAL_VERSION = {v1},
}