@article{mokhtari:hal-01861355,
TITLE = {Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers},
AUTHOR = {Mokhtari, Merwan and Pagnod-Rossiaux, Philippe and Laruelle, Francois and Landesman, Jean-Pierre and Mor{\'e}ac, Alain and Levallois, Christophe and Cassidy, Daniel T},
URL = {https://univ-rennes.hal.science/hal-01861355},
JOURNAL = {Journal of Electronic Materials},
PUBLISHER = {Institute of Electrical and Electronics Engineers},
SERIES = {Special Section: 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)},
VOLUME = {47},
NUMBER = {9},
PAGES = {4987-4992},
YEAR = {2018},
MONTH = Sep, DOI = {10.1007/s11664-018-6221-x},
KEYWORDS = {quantum well ; reliability ; residual stress ; oxide aperture ; VCSEL},
PDF = {https://univ-rennes.hal.science/hal-01861355/file/Mokhtari_Optical%20Characterizations%20of%20VCSEL.pdf},
HAL_ID = {hal-01861355},
HAL_VERSION = {v1},
}