@article{querre:hal-01807075,
TITLE = {Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3},
AUTHOR = {Querre, M. and Tranchant, J. and Corraze, B. and Cordier, St{\'e}phane and Bouquet, V. and Deputier, Stephanie and Guilloux-Viry, Maryline and Besland, M. -P. and Janod, Etienne and Cario, Laurent},
URL = {https://univ-rennes.hal.science/hal-01807075},
JOURNAL = {Physica B: Condensed Matter},
PUBLISHER = {Elsevier},
VOLUME = {536},
PAGES = {327-330},
YEAR = {2018},
MONTH = May, DOI = {10.1016/j.physb.2017.10.060},
KEYWORDS = {Mott insulators ; V2O3 ; Mott transition ; Resistive switching ; Non-volatile memory ; ReRAM},
PDF = {https://univ-rennes.hal.science/hal-01807075/file/Physica%20b_Mott%20memory%20%20V2O3Cr_SCES_HAL.pdf},
HAL_ID = {hal-01807075},
HAL_VERSION = {v1},
}