@incollection{sawa:hal-01716453,
TITLE = {Nanosession: Variants of Resistive Switching},
AUTHOR = {Sawa, Akihito and Tsurumaki-Fukuchi, Atsushi and Yamada, Hiroyuki and Rodenb{\"u}cher, Christian and Szot, Krzysztof and Waser, Rainer and Lee, Shin Buhm and Park, Jong-Bong and Lee, Myoung-Jae and Noh, Tae Won and Rozenberg, Marcelo J. and S{\'a}nchez, Mar{\'i}a J. and Stoliar, Pablo and Weht, Ruben and Acha, Carlos and Gomez-Marlasca, Fernando and Levy, Pablo and Cario, L. and Corraze, B. and Guiot, V. and Salmon, S. and Tranchant, J. and Besland, M.-P. and Ta Phuoc, Vinh and Cren, T. and Roditchev, D. and Janod, E. and Schmeisser, Dieter and Richter, Matthias and Tallarida, Massimo and Long, Shibing and Gagli, Carlo and Cartoix{\`a},
Xavier and Rurali, Riccardo and Miranda, Enrique and Jim{\'e}nez, David and Buckley, Julien and Liu, Ming and Su{\~n}{\'e},
Jordi},
URL = {https://hal.science/hal-01716453},
BOOK
TITLE = {Frontiers in Electronic Materials},
EDITOR = {Heber and J{\"o}rg and Schlom and Darrell and Tokura and Yoshinori and Waser and Rainer and Wuttig and Matthias},
PUBLISHER = {Wiley-VCH Verlag GmbH \& Co. KGaA},
PAGES = {247--258},
YEAR = {2013},
MONTH = Apr, DOI = {10.1002/9783527667703.ch45},
KEYWORDS = {bipolar resistive switching (BRS) ; multiferroic BiFeO3 ; non-volatile memory devices ; Pt/Nb:SrTiO3 interfaces ; resistance random access memory (ReRAM) ; TiO2 films ; transtition metal oxide},
HAL_ID = {hal-01716453},
HAL_VERSION = {v1},
}