@article{bebiche:hal-01484527,
TITLE = {Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter},
AUTHOR = {Bebiche, S. and Bouhadda, I. and Mohammed-Brahim, T. and Coulon, N. and Bergamini, Jean-Francois and Poriel, Cyril and Jacques, Emmanuel},
URL = {https://univ-rennes.hal.science/hal-01484527},
JOURNAL = {Solid-State Electronics},
PUBLISHER = {Elsevier},
VOLUME = {130},
PAGES = {49--56},
YEAR = {2017},
MONTH = Apr, DOI = {10.1016/j.sse.2017.01.009},
KEYWORDS = {Computer circuits ; Deposition ; Deposition rates ; Evaporation ; Molecules ; Single crystals ; Temperature ; CMOS inverters ; Electrical stability ; Evaporation conditions ; Field-effect mobilities ; Indenofluorene ; Organic electronics ; Output voltage swings ; Peak-to-peak magnitude ; CMOS integrated circuits},
PDF = {https://univ-rennes.hal.science/hal-01484527/file/Bebiche%20et%20al.%20-%20Performance%20improvement%20of%20IF%28CN2%292%20meta%20based%20N-c.pdf},
HAL_ID = {hal-01484527},
HAL_VERSION = {v1},
}