@article{hamdoun:hal-01300890,
TITLE = {Characterisation and analytical modeling of GaN HEMT-based varactor diodes},
AUTHOR = {Hamdoun, Abdelaziz and Roy, L. and Himdi, Mohamed and Lafond, Olivier},
URL = {https://univ-rennes.hal.science/hal-01300890},
JOURNAL = {Electronics Letters},
PUBLISHER = {IET},
VOLUME = {51},
NUMBER = {23},
PAGES = {1930-1932},
YEAR = {2015},
DOI = {10.1049/el.2015.2362},
KEYWORDS = {equivalent circuits ; gallium compounds ; GaN ; HEMT based varactor diodes ; high electron mobility transistors ; III-V semiconductors ; microwave diodes ; microwave field effect transistors ; physical equivalent circuit ; size 0.5 mum ; size 0.15 mum ; small signal measurements ; varactors ; wide band gap semiconductors},
PDF = {https://univ-rennes.hal.science/hal-01300890/file/Characterisation%20and%20analytical%20modelling%20of%20GaN%20HEMT-based%20varactor%20diodes_accepted.pdf},
HAL_ID = {hal-01300890},
HAL_VERSION = {v1},
}