@article{landesman:hal-01225634,
TITLE = {Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour},
AUTHOR = {Landesman, Jean-Pierre and Levallois, Christophe and Jimenez, J. and Pommereau, F. and L{\'e}ger, Yoan and Beck, Alexandre and Delhaye, T. and Torres, A. and Frigeri, C. and Rhallabi, A},
URL = {https://univ-rennes.hal.science/hal-01225634},
JOURNAL = {Microelectronics Reliability},
PUBLISHER = {Elsevier},
SERIES = {Proceedings of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2015)},
VOLUME = {55},
NUMBER = {9-10},
PAGES = {1750--1753},
YEAR = {2015},
DOI = {10.1016/j.microrel.2015.07.029},
KEYWORDS = {III-V semiconductors ; Photonic materials ; Quantum wells ; Defects ; Luminescence ; Mechanical stress ; Dry etching},
HAL_ID = {hal-01225634},
HAL_VERSION = {v1},
}