@inproceedings{gautier:hal-00944710,
TITLE = {Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HDMO)},
AUTHOR = {Gautier, G. and Viana, C.E. and Crand, Samuel and Rogel, Regis and Morimoto, N.I. and Bonnaud, Olivier},
URL = {https://hal.science/hal-00944710},
BOOK
TITLE = {ElectroChem. Soc. TFTVI},
ADDRESS = {Salt Lake City, United States},
YEAR = {2002},
MONTH = Oct, HAL_ID = {hal-00944710},
HAL_VERSION = {v1},
}