@article{durand:hal-00842763,
TITLE = {Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications},
AUTHOR = {Durand, Olivier and Robert, C{\'e}dric Robert and Nguyen, Thanh Tra and Almosni, Samy and Quinci, Thomas and Kuyyalil, Jithesh and Cornet, Charles and L{\'e}toublon, Antoine and Levallois, Christophe and Jancu, Jean-Marc and Even, Jacky and Pedesseau, Laurent and Perrin, Mathieu and Bertru, Nicolas and Sakri, Abdallah and Boudet, Nathalie and Ponchet, Anne and R{\^a}le, Pierre and Lombez, Laurent and Guillemoles, J.-F. and Marie, Xavier and Balocchi, Andrea and Turban, Pascal and Tricot, Sylvain and Modreanu, M. and Loualiche, Slimane and Le Corre, Alain},
URL = {https://hal.science/hal-00842763},
NOTE = {San Francisco, California, United States},
JOURNAL = {Proceedings of SPIE, the International Society for Optical Engineering},
PUBLISHER = {SPIE, The International Society for Optical Engineering},
SERIES = {Quantum sensing and nanophotonic devices X},
VOLUME = {8631},
PAGES = {863126},
YEAR = {2013},
MONTH = Feb, DOI = {10.1117/12.2012670},
KEYWORDS = {electroluminescence and photoluminescence ; solar cells ; monolithic integration ; photonics on silicon ; GaP/Si ; quantum dots ; quantum wells ; TEM and XRD},
PDF = {https://hal.science/hal-00842763/file/2013_SPIE8631_Durand_863126-1.PDF},
HAL_ID = {hal-00842763},
HAL_VERSION = {v1},
}