@article{khelifati:hal-00619526,
TITLE = {The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)},
AUTHOR = {Khelifati, N. and Tata, S. and Rahal, A. and Cherfi, Rabah and Fedala, Abdelkrim and Kechouane, M. and Mohammed-Brahim, Tayeb},
URL = {https://hal.science/hal-00619526},
NOTE = {WOS},
JOURNAL = {physica status solidi (c)},
PUBLISHER = {Wiley},
VOLUME = {7},
NUMBER = {3-4},
PAGES = {679-682},
YEAR = {2010},
DOI = {10.1002/pssc.200982718},
HAL_ID = {hal-00619526},
HAL_VERSION = {v1},
}