@article{jacques:hal-00618107,
TITLE = {Electrical behaviour of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films},
AUTHOR = {Jacques, Emmanuel and Pichon, Laurent and Debieu, Olivier and Gourbilleau, Fabrice},
URL = {https://hal.science/hal-00618107},
NOTE = {6},
JOURNAL = {Nanoscale Research Letters},
PUBLISHER = {SpringerOpen},
VOLUME = {6},
PAGES = {170},
YEAR = {2011},
MONTH = Feb, DOI = {10.1186/1556-276X-6-170},
KEYWORDS = {Rectifying diode ; Conduction mechanisms ; Silicon oxynitride ; Silicon nanoclusters ; Poole Frenkel ; Fowler Nordheim ; Space charge limited current},
PDF = {https://hal.science/hal-00618107/file/PubliNRL2011.pdf},
HAL_ID = {hal-00618107},
HAL_VERSION = {v1},
}