@inproceedings{khelifati:hal-00398300,
TITLE = {The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)},
AUTHOR = {Khelifati, N. and Tata, A. and Rahal, A. and Fedala, Abdelkrim and Cherfi, Rabah and Kechouane, M. and Mohammed-Brahim, Tayeb},
URL = {https://hal.science/hal-00398300},
BOOK
TITLE = {23nd International Conference on Amorphous and Nanocrystalline Semiconductors},
ADDRESS = {Utrecht, Netherlands},
YEAR = {2009},
MONTH = Aug, HAL_ID = {hal-00398300},
HAL_VERSION = {v1},
}